1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c24a i c90 t c = 90 c12a i cm t c = 25 c, 1 ms 48 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 i cm = 24 a (rbsoa) clamped inductive load, l = 300 h @ 0.8 v ces p c t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. weight 4g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s features ? very high frequency igbt new generation hdmos tm process international standard package jedec to-220ab and to-263aa high peak current handling capability applications pfc circuit ac motor speed control dc servo and robot drives switch-mode and resonant-mode power supplies high power audio amplifiers advantages fast switching speed high power density 98513b (7/00) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ge = v ge 2.5 5.0 v i ces v ce = 0.8 v ces t j = 25 c 200 a v ge = 0 v t j = 125 c 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i ce90 , v ge = 15 v 2.1 2.7 v hiperfast tm igbt lightspeed tm series v ces = 600 v i c25 = 24 a v ce(sat) = 2.1 v t fi(typ) = 55 ns ixga 12n60cd1 ixgp 12n60cd1 to-220 ab (ixgp) g = gate c = collector e = emitter tab = collector e c g g e to-263 (ixga) c (tab) ixys reserves the right to change limits, test conditions, and dimensions. preliminary data
2 - 2 ? 2000 ixys all rights reserved ixga 12n60cd1 ixgp 12n60cd1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 5 11 s pulse test, t 300 s, duty cycle 2 % c ies 860 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 100 pf c res 15 pf q g 32 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 10 nc q gc 10 nc t d(on) 20 ns t ri 20 ns t d(off) 60 ns t fi 55 ns e off 0.09 mj t d(on) 20 ns t ri 20 ns e on 0.5 mj t d(off) 85 180 ns t fi 85 180 ns e off 0.27 0.60 mj r thjc igbt 1.25 k/w r thck 0.25 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 300 h v ce = 0.8 v ces , r g = r off = 18 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 300 h v ce = 0.8 v ces , r g = r off = 18 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 15a; t vj = 150 c 1.7 v t vj = 25 c 2.5 v i rm v r = 100 v; i f =25a; -di f /dt = 100 a/ s 2 2.5 a l < 0.05 h; t vj = 100 c t rr i f = 1 a; -di/dt = 50 a/ s; v r = 30 v t j = 25 c35ns r thjc diode 1.6 k/w to-263 aa (ixga) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-220 ab (ixgp) outline dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
|
